SiN ROM and method of fabricating the same

Details SiN ROM and method of fabricating the same SiN ROM and method of fabricating the same

2005-01-04

2005-01-04

Elms, Richard (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S288000, C438S289000, C438S294000

Reexamination Certificate

active

06838345

ABSTRACT:
A fabrication method for a silicon nitride read only memory includes sequentially forming a tunneling oxide layer and a charge capture layer on a substrate. An isolation region is formed in the charge capture layer to partition the charge capture layer into a plurality of charge capture blocks. A stacked dielectric layer is then formed on the charge capture layer and the isolation region. Thereafter, the stacked dielectric layer and the charge capture layer are patterned to expose regions of the substrate for forming bit lines, followed by forming a field oxide layer and a control gate. A step of threshold voltage adjustment is subsequently performed such that the channel regions under the charge capture blocks are implanted to adjust the threshold voltages thereof

REFERENCES:
patent: 6649971 (2003-11-01), Yeh et al.
patent: 20040119108 (2004-06-01), Chang

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