Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

Filed on

2005-07-12

Date issued

2005-07-12

Examiner

Kang, Donghee (Department: 2811)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S314000, C257S315000, C438S201000, C438S211000, C438S257000

Type

Reexamination Certificate

Status

active

Patent number

06917072

Description

ABSTRACT:
A semiconductor memory device comprises a first conductivity type semiconductor region, a second conductivity type source and drain regions provided in the semiconductor region, a gate insulating film structure provided on the semiconductor region between the source region and drain region and including a first insulating film, a charge accumulation layer and a second insulating film, the charge accumulation layer being selected from a silicon nitride film, a silicon oxynitride film, an alumina film and a stacked film of these films, a control gate electrode provided on the second insulating film, a gate sidewall provided on a side of the control gate electrode and having a thickness thinner than that of the second insulating film in the center of the control gate electrode, a third insulating film provided above the control gate electrode, and a fourth insulating film provided to cover the gate electrode sidewall and the third insulating film.

REFERENCES:
patent: 6661040 (2003-12-01), Takashino
patent: 2004/0094793 (2004-05-01), Noguchi
patent: 9-74146 (1997-03-01), None
patent: 10-284627 (1998-10-01), None
U.S. Appl. No. 10/393,946, filed Mar. 24, 2003, Noguchi et al.
U.S. Appl. No. 10/954,238, filed Oct. 1, 2004, Goda et al.
U.S. Appl. No. 10/393,946, filed Mar. 24, 2003, Noguchi et al.
U.S. Appl. No. 10/822,177, filed Apr. 12, 2004, Noguchi et al.
U.S. Appl. No. 10/393,946, filed Mar. 24, 2003 Noguchi et al.
U.S. Appl. No. 10/850,408, filed May 21, 2004, Noguchi et al.
F. Masuoka, “Handbook of Flash Memory Technologies”, 1993, pp. 206-215.

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