Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-04-19

2005-04-19

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S176000

Reexamination Certificate

active

06881631

ABSTRACT:
A method of manufacturing a semiconductor device comprises forming a first conductive material film on a semiconductor substrate with a gate insulating film interposed therebetween, selectively forming a second conductive material film on the first conductive material film, the second conductive material film being capable of reducing the first conductive material film, causing that portion of the first conductive material film which is selectively covered with the second conductive material film to be subjected to a reducing reaction with the second conductive material film so as to change the composition of the resultant film and to form a third conductive material film differing in the work function from the first conductive material film, and forming a first gate electrode having the first conductive material film and a second gate electrode having at least the third conductive material film and differing from the first gate electrode in the work function.

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