Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-19
2005-04-19
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S305000, C257S307000, C257S310000, C257S311000, C257S309000, C257S312000, C438S253000, C438S252000, C438S251000
Reexamination Certificate
active
06881999
ABSTRACT:
A semiconductor device having an analog capacitor and a method of fabricating the same are disclosed. The semiconductor device includes a bottom plate electrode disposed at a predetermined region of a semiconductor substrate, and an upper plate electrode having a region overlapped with the bottom plate electrode thereon. The upper plate electrode and the bottom plate electrode are formed of a metal compound. A capacitor dielectric layer is interposed between the bottom plate electrode and the upper plate electrode. A bottom electrode plug and an upper electrode plug are connected to the bottom plate electrode and the upper plate electrode through the interlayer dielectric layer.
REFERENCES:
patent: 6025226 (2000-02-01), Gambino et al.
patent: 6081021 (2000-06-01), Gambino et al.
patent: 6261917 (2001-07-01), Quek et al.
patent: 6483142 (2002-11-01), Hsue et al.
patent: 01-203329 (2001-07-01), None
patent: 02-30421 (2002-04-01), None
Lee Ki-Young
Park Sang-Hoon
Erdem Fazli
Flynn Nathan J.
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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