Method of formation of semiconductor resistant to hot...

Details Method of formation of semiconductor resistant to hot... Method of formation of semiconductor resistant to hot...

2005-09-27

2005-09-27

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S954000

Reexamination Certificate

active

06949433

ABSTRACT:
The present invention, in one embodiment, relates to a process for fabricating a semiconductor device that is resistant to hot carrier induced stress. The method includes the steps of forming an oxide layer on a semiconductor substrate, the oxide layer and the semiconductor substrate forming a substrate-oxide interface, in which the interface includes at least one of silicon-hydrogen bonds or dangling silicon bonds; and exposing the interface to ultraviolet radiation and an atmosphere comprising at least one gas having at least atom capable of forming a silicon-atom bond under conditions sufficient to convert at least a portion of the at least one of silicon-hydrogen bonds or dangling silicon bonds to silicon-atom bonds.

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patent: 6468599 (2002-10-01), Terada
U.S. Appl. No. 10/429,447, filed May 5, 2003, entitled “Process for Reducing Hydrogen Contamination in Dielectric Materials in Memory Devices”.

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