Method of manufacturing a capacitor with copper electrodes...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S253000, C438S396000

Reexamination Certificate

active

06921689

ABSTRACT:
A method of manufacturing a capacitor having a couple of electrodes with a dielectric placed therebetween. At least one of the electrodes is made of copper, and barriers for preventing the diffusion of copper into the dielectric are provided between the dielectric and the copper electrode, respectively.

REFERENCES:
patent: 5661334 (1997-08-01), Akram
patent: 5976928 (1999-11-01), Kirlin et al.
patent: 6008083 (1999-12-01), Brabazon et al.
patent: 6180976 (2001-01-01), Roy
patent: 6184551 (2001-02-01), Lee et al.
patent: 6207552 (2001-03-01), Wang et al.
patent: 6320244 (2001-11-01), Alers et al.
patent: 6346454 (2002-02-01), Sung et al.
patent: 6426249 (2002-07-01), Geffken et al.

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