Method of manufacturing a flash memory cell

Details Method of manufacturing a flash memory cell Method of manufacturing a flash memory cell

2005-05-31

2005-05-31

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S775000

Reexamination Certificate

active

06900096

ABSTRACT:
The present invention relates to a method of manufacturing a flash memory cell capable of preventing an oxidation of a dielectric film between a floating gate and a control gate, in a manner that a polysilicon film for floating gate is deposited, nitrogen ions are injected to make amorphous and contaminate the surface of the polysilicon film.

REFERENCES:
patent: 5631179 (1997-05-01), Sung et al.
patent: 5814862 (1998-09-01), Sung et al.
patent: 6054733 (2000-04-01), Doan et al.
patent: 6396099 (2002-05-01), Joo et al.
patent: 6529410 (2003-03-01), Han et al.

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