Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-07-12
2005-07-12
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S240000, C438S253000, C438S256000, C438S399000, C257S306000, C257S310000, C257S532000
Reexamination Certificate
active
06916722
ABSTRACT:
A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, a contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.
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Chen Chun-Hon
Huang Chi-Feng
Lin Chih Hsien
Wong Shy-Chy
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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