Method of inter-field critical dimension control

Details Method of inter-field critical dimension control Method of inter-field critical dimension control

2005-04-05

2005-04-05

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

06877152

ABSTRACT:
A method of inter-field critical dimension control. The method is applied to a wafer with a plurality of dies manufactured by a wafer manufacturing process that includes exposure. According to the method, a plurality of manufacturing modules is obtained by selecting a manufacturing device for each process of the manufacture. Then, for each manufacturing module, exposure is performed with a predetermined exposure energy to obtain critical dimension distribution data corresponding to the predetermined exposure energy, and critical dimension calibration data for each of the dies is further determined. Thus, when one of the manufacturing modules is applied to perform the manufacture, an exposure energy for each of the dies is determined according to the predetermined exposure energy and the critical dimension calibration data for each of the dies, and the manufacture is performed with the exposure energy on each of the dies for the manufacturing module.

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Papoulis, “Probability, Random Variables, and Stochastic Processes”, McGraw-Hill Inc, 1965, pp. 144.

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