Triple-diffused trench MOSFET and method of fabricating the...

Details Triple-diffused trench MOSFET and method of fabricating the... Triple-diffused trench MOSFET and method of fabricating the...

2005-07-05

2005-07-05

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000

Reexamination Certificate

active

06913977

ABSTRACT:
A trench-gated MOSFET includes adjacent mesas formed on opposite sides of a trench. A body region in the first mesa extends downward below the level of the trenches and laterally across the bottom of the trenches. The body region in the second mesa extends part of the way down the mesa, leaving a portion of the drain abutting the trench. The body region in the second mesa includes a channel region adjacent a wall of the trench. The area where the drain abuts the trench is thus relatively restricted and the drain-gate capacitance of the device is reduced. Moreover, the drain-gate capacitance is made independent of the depth and width of the trenches, allowing greater freedom in the design of the MOSFET.

REFERENCES:
patent: 4084175 (1978-04-01), Ouyang
patent: 4272302 (1981-06-01), Jhabvala
patent: 6521498 (2003-02-01), Zandt In't et al.
patent: 6690062 (2004-02-01), Henninger et al.

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