Method for forming SAC using a dielectric as a BARC and FICD...

Details Method for forming SAC using a dielectric as a BARC and FICD... Method for forming SAC using a dielectric as a BARC and FICD...

2005-04-12

2005-04-12

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S673000, C438S701000, C438S713000

Reexamination Certificate

active

06878622

ABSTRACT:
A method is provided for manufacturing a semiconductor device on a semiconductor substrate using a dielectric as a bottom anti-reflective coating for formation of a photoresist contact opening which is used to enlarge the Final Inspection Critical Dimension (FICD) of the conductive contact. A high selectivity etch is used to form a tapered contact.

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patent: 6060385 (2000-05-01), Givens
patent: 6271117 (2001-08-01), Cherng
patent: 6392310 (2002-05-01), Matsunaga
patent: 6407002 (2002-06-01), Lin et al.
patent: 6731008 (2004-05-01), Tomita et al.

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