Method for manufacturing a nonvolatile memory device

Details Method for manufacturing a nonvolatile memory device Method for manufacturing a nonvolatile memory device

2005-09-13

2005-09-13

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C438S303000, C438S304000, C438S305000, C257S315000, C257S330000

Reexamination Certificate

active

06943082

ABSTRACT:
A method, for manufacturing a nonvolatile memory device, includes: forming a gate layer above which a stopper layer is disposed on a semiconductor layer; forming control gates on both side surfaces of the gate layer with an ONO film interposed therebetween; forming an insulating layer over the entire surface; polishing the insulating layer so that the stopper layer is exposed; removing the stopper layer and thereby exposing the top surface of the gate layer; forming a conductive layer above the gate layer and the insulating layer; etching the conductive layer and the gate layer and thereby forming a word line and a word gate and removing the gate layer remained under the etching.

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