High-speed memory system

Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Bus or line termination

Reexamination Certificate

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Details

C326S086000, C710S108000

Reexamination Certificate

active

06828819

ABSTRACT:

This application claims priority of Korean Patent Application No. 2002-10506, filed on Feb. 27, 2002, the contents of which are herein incorporated by reference in their entirety.
FIELD OF THE INVENTION
The present invention generally relates to memory systems, and in particular, to two-slot memory bus systems having two slots into which individual memory modules may be inserted.
BACKGROUND OF THE INVENTION
It is desirable to reduce high-frequency noise generated in connection with a high-speed operation, thereby reducing a decrease in signal fidelity. Recently, various high-speed bus systems have been adopted to reduce the high-frequency noise of bus channels.
Generally, as an operation speed of a memory bus increases, high-frequency reflection noise increases. This is caused by various kinds of discontinuous points on a bus channel. To prevent or suppress this noise, techniques for improving an impedance matching characteristic of an entire bus channel have been proposed. For example, the impedance matching characteristic of the entire bus channel can be improved by inserting a passive element (e.g., a resistor) into an intermediate or end portion of a bus channel.
A conventional memory bus system adopting a stub series transceiver logic (SSTL) is illustrated in FIG.
1
. Referring to
FIG. 1
, a memory system
10
of the SSTL type has two memory module connectors (or sockets)
12
and
14
into which corresponding memory modules
16
and
18
are inserted, respectively. The memory module connectors
12
and
14
are coupled with a bus
22
that is disposed on a circuit board
20
, which is also commonly referred to as a motherboard. A chipset (or a memory controller)
24
is connected to the first end of the bus
22
, and a termination circuit
26
is connected to the second end thereof. The termination circuit
26
is formed of a termination resistor RT connected to a termination voltage VT. Each of the memory modules
16
and
18
has a memory device
28
that is connected to the bus
22
via a stub resistor RSTUB and a stub line LSTUB. As illustrated in
FIG. 1
, the memory system
10
adopting the SSTL manner includes a series resistor RSERIES that is connected in series with the bus
22
.
With the conventional memory system in
FIG. 1
, the first end of the bus
22
to which the chipset
24
is connected is in an open state (or non-terminated). Likewise, a stub line LSTUB connected to a memory device of a memory module is in an open state instead of a terminated state. This design of the conventional memory circuit induces reflected waves, which result in limiting a high-speed operation characteristic of the memory circuit. At least some of the reflected waves are generated at branch points (or discontinuous points) inherent in the conventional memory system.
SUMMARY OF THE INVENTION
An exemplary embodiment of the present invention provides a two-slot memory system capable an efficient high-speed operation.
An exemplary embodiment of the present invention provides a straightforwardly constructed two-slot memory system.
An exemplary embodiment of the present invention provides a memory system, including a circuit board, a chipset mounted on the circuit board, a plurality of memory module connectors mounted on the circuit board, a plurality of memory modules, each of the plurality of memory modules individually receivable in each of the plurality of memory module connectors, and a bus connected to the chipset and the plurality of memory module connectors. The plurality of memory module connectors are connected to the bus at one branch point thereof. Each of the plurality of memory modules includes at least one memory device connected to the bus via a stub line and a stub resistor, and an impedance of the bus is less than that of the stub lines.
Furthermore, an exemplary embodiment of the present invention provides a memory system, including a chipset having a transceiver and a termination circuit commonly connected to a bus, a plurality of memory module connectors commonly connected to the bus, a memory module insertable into one of the plurality of memory module connectors and having a transceiver and a termination circuit commonly connected to the bus via a stub line and a stub resistor, and another memory module insertable into one of the plurality of memory module connectors and having a transceiver and a termination circuit commonly connected to the bus via another stub line and another stub resistor. An impedance of the bus is less than that of each of the stub lines, and the stub resistors have half the impedance of each of the stub lines.
Moreover, an exemplary embodiment of the present invention provides a circuit associated with a memory system, including a bus line having an impedance value, and at least one stub line connected to the bus line, the at least one stub line having an impedance value greater than the impedance value of the bus line.
Furthermore, an exemplary embodiment of the present invention provides a memory system, including a bus line, a chipset operationally connected to the bus line, and at least one memory module operationally connected to the bus line, the at least one memory module including a termination circuit.
Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.


REFERENCES:
patent: 6026456 (2000-02-01), Ilkbahar
patent: 6122695 (2000-09-01), Cronin
patent: 6172895 (2001-01-01), Brown et al.
patent: 6229335 (2001-05-01), Huang et al.
patent: 6249142 (2001-06-01), Hall et al.
patent: 6522165 (2003-02-01), Ramachandran et al.
patent: 6631083 (2003-10-01), McCall et al.
patent: 2003/0099138 (2003-05-01), Kyung

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