Thin film silicon on insulator semiconductor integrated circuit

Details Thin film silicon on insulator semiconductor integrated circuit Thin film silicon on insulator semiconductor integrated circuit

1995-11-02

1998-01-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 437 6, H01L 2362

Patent

active

057082880

ABSTRACT:
A thin film silicon on insulator circuit with a low voltage triggered, surface silicon controlled rectifier (30) for electrostatic damage protection and method is provided. A surface silicon controller rectifier (30) is formed in a thin device layer (130), overlying a buried insulation layer (110) and electrically coupled to a low voltage trigger apparatus (36). In one embodiment, a zener diode is employed as the low voltage trigger apparatus (36), and in another embodiment low voltage trigger apparatus (36) is an n-channel MOSFET.

REFERENCES:
patent: 4423431 (1983-12-01), Sasaki
patent: 4989057 (1991-01-01), Lu
patent: 5172208 (1992-12-01), Malhi
patent: 5240865 (1993-08-01), Malhi
patent: 5369041 (1994-11-01), Duvvury
patent: 5399507 (1995-03-01), Sun
patent: 5440153 (1995-08-01), Male et al.
patent: 5502317 (1996-03-01), Duvvury

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