Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-01-23
1993-02-09
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257622, 257623, 257773, H01L 2978
Patent
active
051856468
ABSTRACT:
On a semiconductor substrate are formed a plurality of pedestal regions which are of the same conductivity type as the semiconductor substrate. Insulating layers are formed on side surfaces of the pedestal regions. On the insulating layers are formed gate electrodes which are connected together. First and second regions are formed within top portions of the pedestal regions and the semiconductor substrate. The first and second regions serve as source/drain regions and are of the opposite conductivity type to the semiconductor substrate. The first regions, the second regions and the gate electrodes function to form a single transistor because the gate electrodes are connected together.
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IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, "Multi-Pillar Surrounding Gate Transistor (M-SGT) for compact and High Speed Circuits" by Nitayama et al, pp. 579-583.
IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, "Impact of Surrounding Gate Transistor (SGT) for Ultra-High-Density LSI's" by Takato et al, pp. 573-577.
Symp. VLSI Tech. Digest, p. 23 (1988), T. Mizuno et al., "High Speed and Highly Reliable Trench MOSFET wtih Dual-Gate".
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Hille Rolf
Kabushiki Kaisha Toshiba
Loke Steven
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