Thin film transistor performance enhancement by water plasma tre

Details Thin film transistor performance enhancement by water plasma tre Thin film transistor performance enhancement by water plasma tre

1996-10-21

1998-01-13

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438308, 438910, H01L 21265

Patent

active

057078955

ABSTRACT:
A process is provided in which silicon thin film transistors fabricated with polycrystalline silicon, silicon oxide, and silicon conductive layers are exposed to microwave plasmas containing water vapor and to subsequent annealing steps to bring about an improvement in the ratio of device drain current in the conductive state to that in the non-conductive state, and a lower device subthreshold voltage swing.

REFERENCES:
patent: 4879156 (1989-11-01), Herron et al.
patent: 5273920 (1993-12-01), Kwasnick et al.
patent: 5384271 (1995-01-01), Kwasnick et al.
patent: 5419804 (1995-05-01), Ojha et al.
patent: 5470619 (1995-11-01), Ahn et al.
patent: 5477073 (1995-12-01), Wakai et al.
patent: 5508227 (1996-04-01), Chan et al.
patent: 5534445 (1996-07-01), Tran et al.
patent: 5567633 (1996-10-01), Gosain et al.
Szeto et al, "Correlation of chemical and electrical properties of plasma-deposited tetramethyisilane films", Journal of Applied Physics, vol. 52, pp. 903-909, 1981.
Wolf et al, "Silicon Processing For The VLSI Era, vol. 1, Process Technology", Lattice Press, pp.185-191, 1986.
Takashi et al, "High Performance Poly-Si TFT's With ECR-Plasma Hydrogen Passivation", IEEE Transactions on Electron Devices, vol. 36, No. 3, pp. 529-533, Mar. 1989.
Sano et al, "High Quality SiO.sub.2 /Si Interfaces of Poly-Crystalline Silicon Thin Film Transistors by Annealing in Wet Atmosphere", IEEE Electron Device Letters, vol. 16, No. 5, May, 1995, pp. 157-160.
Chern et al. "The Effects of H.sub.2 -O.sub.2 Plasma Treatment on the Characteristics of Polysilicon Thin-Film Transistors", IEEE Trans. Electron, Dev. vol. 40, No. 12, Dec. 1993, pp. 2301-2306.

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