Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
1998-05-13
2003-02-04
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C427S099300
Reexamination Certificate
active
06514884
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for reforming a base surface before thin film deposition, a method for manufacturing the semiconductor device and an equipment for manufacturing the same, and more particularly to the method for reforming the base surface before the thin film deposition, the method for manufacturing the semiconductor device and the equipment for manufacturing the same in the thin film deposition by CVD (Chemical Vapor deposition) method using O
3
/TEOS (Tetraehylorthosilicate) system reaction gas (the gases containing O
3
and TEOS).
2. Description of the Prior Art
It is known that a property of the film formed on the base layer is greatly influenced by the surface condition of the base layer.
Especially, characteristics of CVD film deposited by the CVD method using an O
3
/TEOS gas system for thin film deposition greatly depends upon the surface condition of the base layer. For example, the growth rate of the thin film is reduced remarkably and the deposited film becomes porous when the surface of the base layer is hydrophilic.
Therefore, the fluidity, the flatness, the embedding ability and the step-coverage of the film deposited on a surface of a base layer are lowered.
It is thought that such deposition irregularity is caused by an intermediate generated in the reaction of O
3
gas and TEOS gas which is a polymer with hydrophilicity, and it is shown that a film can not be deposited on the surface of the base layer when the surface of the base layer is hydrophilic.
Methods eliminating dependence on the surface of the base layer described above, include
(1) a method of plasma processing using the gases such as NH
3
, H
2
or the like,
(2) a method using an insulating film formed using a low concentration of O
3
as the base layer,
(3) a method using an insulating film formed by a plasma CVD method as the base layer,
(4) a method processing the surface of the base layer, before the thin film deposition, with alcohol, or the like.
However, there are problems as described below in the above-mentioned methods. That is, (1) In the method of plasma processing, using gases such as NH
3
, H
2
or the like, films having good embedding ability and step-coverage have not been formed, when depositing the film on very narrow regions such as via holes and contact holes. (2) In the method using the insulating film formed by a plasma CVD method as the base layer, it has been difficult to form the insulating film being used as the base layer on the very narrow regions such as the via holes and the contact holes. (3) Also in the method using the insulating film formed by the plasma CVD method as the base layer, it has been difficult to form the insulating film being used as the base layer on the very narrow regions such as the via holes and the contact holes. (4) In the method processing the surface of the base layer before the thin film deposition with alcohol, the effect of reform is poor in reproduction and, in addition, the effect of reform processing of the base surface can not be maintained.
SUMMARY OF THE INVENTION
The object of the invention is to provide a method for reforming a base surface before the thin film deposition, a method for manufacturing a semiconductor device and apparatus for manufacturing the same, capable of maintaining a reformed base layer surface, to improve the fluidity, the flatness, the embedding ability and the step-coverage of the film deposited on the surface of the base layer and, especially, to improve the embedding ability and the step-coverage of the film formed in the very narrow regions such as the via-holes and the contact holes of the base layer.
In the invention, reform of the surface of the base layer in a reaction chamber is performed with a gas containing a halogen, and subsequently, a thin film can be deposited on the reformed surface of the base layer.
According to experiments of the inventor of this application, it has been found that when reform of the surface of the base layer is performed by a gas containing a halogen element, the effect of reform of the base layer surface can be maintained for the long term as compared to the prior art, in addition, the fluidity, the flatness, the embedding ability and the step-coverage of the film formed on the reformed surface of the base layer can be improved.
Especially, the embedding ability and the step-coverage of the film formed in the via holes or the like can be improved, even though there are the very narrow-concave regions such as the via holes and the contact holes in the base layer.
Moreover, the fluidity, the flatness, the embedding ability and the step-coverage of the film formed on the surface of the base layer thereof can be improved, when reform of the surface of the base layer is performed while heating the base layer.
Especially, it was confirmed that the reformed effect can be further enhanced by heating the surface to a temperature of 100° C. or more while reforming the surface.
REFERENCES:
patent: 3931067 (1976-01-01), Goldberg et al.
patent: 3942982 (1976-03-01), Yanazawa et al.
patent: 5080933 (1992-01-01), Grupen-Shemansky et al.
patent: 5365877 (1994-11-01), Kubota
patent: 5376591 (1994-12-01), Maeda et al.
patent: 5387546 (1995-02-01), Maeda et al.
patent: 5479727 (1996-01-01), Fine et al.
patent: 5484749 (1996-01-01), Maeda et al.
patent: 5508540 (1996-04-01), Ikeda et al.
patent: 5723909 (1998-03-01), Yano et al.
patent: 5807785 (1998-09-01), Ravi
patent: 1044041 (1966-09-01), None
patent: 574747 (1993-03-01), None
patent: 590249 (1993-04-01), None
patent: 7-66287 (1993-08-01), None
patent: 6157019 (1994-06-01), None
patent: 9176825 (1997-07-01), None
Merriam-Wesbster's Collegiate Dictionary (10thedition), p. 524.*
Michael et al, “Reactions of Chlorosilanes with Silica Surface”, The Journal of Physical Chemistry, vol. 73, No. 7, Jul. 1969, pp. 2372-2378.*
Yanazawa et al, “Hydrophobic conversion of the chemical deposited silicon oxide surface”, Japan J. Appl. Phys., Suppl. 2, Pt 1, 1974, pp. 753-756.*
Fujino et al, “Reaction Mechanism of TEOS and O3 atmospheric pressure CVD”, VMIC conference, Jun. 1991, Eighth International IEEE, pp. 11-12.*
Lou, Jen-Chung et al “Dichlorosilane Effects on Low-Temperature Selective Silicon Epitaxy” Applied Physics Letters 58(Jan. 7, 1991).
Chaudhari Chandra
Lorusso & Loud
Pham Thanhha
Semiconductor Process Laboratory Co. Ltd.
LandOfFree
Method for reforming base surface, method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for reforming base surface, method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reforming base surface, method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3169112