Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-05
1998-10-13
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438299, 438298, 438300, 438450, 438526, H01L 21336
Patent
active
058211454
ABSTRACT:
A method for isolating elements in semiconductor devices is disclosed, which includes the steps of: forming a field oxide layer on the surface of a semiconductor substrate; using a photo resist pattern to define a field region and an active region; carrying out an ion implantation of several MeV with the photo resist pattern remaining on the field region, so as to form a channel stop layer on the field oxide layer region; and forming a soft error-preventing buried layer in the active region. The field insulating layer may be a silicon oxide layer or a silicon nitride layer. Additionally, a selective epitaxial process may be carried out so as to raise the level of the active region to substantially the height of the field isolating region, thereby flattening the surface.
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Dang Trung
LG Semicon Co. Ltd.
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