Method of manufacturing a vertical semiconductor device with gro

Details Method of manufacturing a vertical semiconductor device with gro Method of manufacturing a vertical semiconductor device with gro

1995-06-06

1997-09-02

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438656, 438665, 438928, 438977, 438586, H01L 2144

Patent

active

056630964

ABSTRACT:
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.

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