Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-05-30
1999-02-23
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438267, 438589, H01L 218247
Patent
active
058743375
ABSTRACT:
An EEPROM memory cell has a floating gate structure that extends over a sharp edge of a memory cell trench and into the trench. Channel hot electron injection techniques are used in conjunction with the floating gate structure to lower required programming voltages and times for the EEPROM cell. Further reductions in programming times and voltages are achieved using trench sidewall diffusions and substrate surface grooves. When used, the floating gate contourally follows the grooves intersecting the surface of the substrate.
REFERENCES:
patent: 4425631 (1984-01-01), Adam
patent: 4511811 (1985-04-01), Gupta
patent: 4673829 (1987-06-01), Gupta
patent: 4796228 (1989-01-01), Baglee
patent: 4814840 (1989-03-01), Kameda
patent: 4835741 (1989-05-01), Baglee
patent: 4975383 (1990-12-01), Baglee
patent: 4975384 (1990-12-01), Baglee
patent: 4990979 (1991-02-01), Otto
patent: 5040036 (1991-08-01), Hazani
patent: 5162247 (1992-11-01), Hazani
patent: 5180680 (1993-01-01), Yang
patent: 5291439 (1994-03-01), Kaufmann et al.
patent: 5495441 (1996-02-01), Hong
Hsu, C.H. & Wu. B.S., "EEPROM Cell For Low Power and High Density Application,"IBM Technical Disclosure Bulletin, vol. 35, No. 4B, Sep. 1992, pp. 23-25.
Chaudhari Chandra
International Business Machines - Corporation
LandOfFree
Method of forming eeprom cell with channel hot electron programm does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming eeprom cell with channel hot electron programm, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming eeprom cell with channel hot electron programm will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-306457