Method of dry development utilizing quinone diazide and basic po

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430166, 430192, 430313, 430325, 430326, 156628, 156643, 156646, G03F 736

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active

052759202

ABSTRACT:
A finely structurable resist system for a dry development process is provided. A latent image is produced in a light-sensitive layer by imaging exposure and is intensified by treatment with, for example, an organosilicon compound. The etching resistance to an oxygen plasma is simultaneously increased. The light-sensitive layer preferably comprises anhydride or epoxy groups that are suitable for reaction with the functional groups of the organosilicon compounds. A silylizing treatment can be implemented with a solution or emulsion in a simple apparatus or can be implemented in the vapor phase.

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