Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reissue Patent
1997-03-26
2003-01-07
Sherry, Michael J. (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S769000
Reissue Patent
active
RE037960
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for forming an oxide film in a semiconductor device, more particularly to a method for forming an oxide film, which can obtain an oxide film of good quality by growing an oxide film under environment of mixed gas of N
2
O gas and NH
3
gas during a main oxidation process and by using N
2
O gas during a pre-oxidation process and a post-oxidation process.
2. Information Disclosure Statement
In general, in order to enhance the reliability of oxide film in a semiconductor device, nitrogen is introduced in an oxide film. In the method for forming an oxide film using NH
3
gas, the long-term reliability of the oxide film is deteriorated due to hydrogen ions contained in NH
3
gas. There is another method for forming an oxide film using N
2
O gas, however, an high temperature process is required because of the high activation energy of N
2
O gas. Also it is impossible to control independently the oxidation rate and influx of the nitrogen. That is, N
2
O gas is resolved into 64.3% of N
2
, 31.0% of O
2
gas and 4.7% of NO gas in the oxidation chamber under a temperature of 950 degree Celsius. The NO gas is needed to introduce nitrogen into the oxide film, however, NO gas exists in extremely small quantities of 4.7%. Also, most of the NO gas acts upon the O
2
gas, and NO
2
gas is formed according to the chemical reaction formula: (2NO+O
2
=2NO
2
). Therefore, because the influx of nitrogen depends on the degree of reaction of NO gas and O
2
gas, it is impossible to control independently the oxidation rate and influx of the nitrogen.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a method for forming an oxide film using N
2
O gas, and mixed gas of N
2
O gas and NH
3
gas, so that it is possible to control the oxidation rate and influx of the nitrogen and obtain an oxide film of good quality.
To achieve the above object, a method for forming an oxide film comprises the steps of:
a) initiating oxide film formation by introducing an NITROUS OXIDE containing gas;
b) controlling the oxidation rate and influx of nitrogen by introducing ammonia into the nitrous oxide containing gas; and
c) halting the introducing of ammonia gas while maintaining the flow of nitrous oxide containing gas until formation of the oxide film is complete.
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patent: 5631199 (1997-05-01), Park
Yoon et al., “MOS characteristic of NH3 nitrided N2O grown oxides”, IEEE Electron Device Letters, vol. 14, No. 4, Apr. 1993.*
Arakawa, T. et al., “Effect of NH3 nitridation on time-dependent dielectric breaddown characteristics of heavily oxynitride tunnel oxide films”, Electronics Letters, vol. 30, No. 4, Feb. 17, 1994.*
S. Wolf and R. N. Tauber,Silicon Processing for the VLSI Era, Volume I, Process Technology,Lattice Press (eds.). See Chapter 6, “Chemical Vapor Deposition of Amorphous and Polycrystalline Thin Films,” specifically p. 195, “Silicon Oxynitrides” (1986).
Hynix / Semiconductor Inc.
Kilday Lisa
Sherry Michael J.
Townsend and Townsend / and Crew LLP
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