Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2002-05-31
2003-09-09
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S591000, C438S624000, C438S763000, C438S775000, C438S791000
Reexamination Certificate
active
06617210
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to methods for making semiconductor devices, in particular, semiconductor devices that include high-k gate dielectric layers.
BACKGROUND OF THE INVENTION
MOS field-effect transistors with very thin gate dielectrics made from silicon dioxide may experience unacceptable gate leakage currents. Forming the gate dielectric from certain high-k dielectric materials, in place of silicon dioxide, can reduce gate leakage. Such a dielectric may not, however, be compatible with polysilicon—the preferred material for making the device's gate electrode. Placing a thin layer of titanium nitride, which is compatible with many high-k gate dielectrics, between a high-k gate dielectric and a polysilicon-based gate electrode may enable such a dielectric to be used with such a gate electrode. Unfortunately, for devices built on certain types of substrates, the presence of such a layer may increase the transistor's threshold voltage, which is undesirable.
Accordingly, there is a need for an improved process for making a semiconductor device that includes a high-k gate dielectric. There is a need for such a process in which a polysilicon-based gate electrode is formed on such a gate dielectric to create a functional device—without causing undesirable work function shifts. The method of the present invention provides such a process.
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Arghavani Reza
Chau Robert
Everhart Caridad
Keshavan Belur V
Seeley Mark V.
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