Semiconductor integrated circuit device and method of laying...

Electronic digital logic circuitry – Significant integrated structure – layout – or layout...

Reexamination Certificate

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Details

C326S047000, C326S093000, C326S095000, C326S096000, C326S102000

Reexamination Certificate

active

06400182

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a semiconductor integrated circuit device having a plurality of clock driver circuits dispersedly arranged in a core region in a semiconductor integrated circuit, the clock driver circuits supplying appropriate clock signals to a plurality of cells using the clock signals and arranged in the core region, through clock signal supply lines interconnected in a mesh in the core region, and a method of trying out the clock driver circuits.
BACKGROUND OF THE INVENTION
Conventionally, in a semiconductor integrated circuit device such as an ECA (Embedded Cell Array) or a cell base, the interior region (core region) has two kinds of cells therein. That is, a plurality of cells acting as logic circuits, such as AND or OR circuits, and a plurality of cells acting as a flip-flop circuit or a memory circuit, each requiring clock signals, wherein a clock driver circuit is provided for supplying the clock signals to the cells such as the flip-flop circuit or the memory circuit.
FIG. 8
shows a constitution of a conventional semiconductor integrated circuit device. The semiconductor integrated circuit device
100
has a core region
101
(internal integrated circuit group) and a buffer region
102
(peripheral circuit region). A first signal driver circuit
103
(input driver) is located in the central portion of one side of the core region
101
to amplify a clock signal produced from outside of the semiconductor integrated circuit device
100
. A plurality of second signal driver circuits
104
(
104
a
-
1
to
104
a
-
4
,
104
b
-
1
to
104
b
-
4
,
104
c
-
1
to
104
c
-
4
,
104
d
-
1
to
104
d
-
4
) (main driver) are uniformly located in the core region
101
vertically and horizontally.
Third signal driver circuits
105
a
,
105
b
and fourth signal driver circuits
106
a
-
106
d
(predrivers) are uniformly located between the first signal driver circuit
103
and the second signal driver circuits
104
. A clock signal output by the first driver circuit
103
is supplied to the respective second signal driver circuits
104
in an even manner. A signal line
107
interconnects the first signal driver circuit
103
to the third driver circuits
105
a
,
105
b
. Further, signal line
108
a
interconnects the third signal driver circuit
105
a
to the fourth signal driver circuits
106
a
,
106
b
. The signal line
108
b
interconnects the third signal driver circuit
105
b
to the fourth driver circuits
106
c
,
106
d
. Further, signal lines
109
a
-
109
d
interconnect the fourth signal driver circuits
106
a
-
106
d
to each of the first signal driver circuits
104
, respectively.
Clock signal supply lines
110
-
1
to
110
-n belong to an interconnection line group consisting of lines arranged vertically in the core region
101
. Clock signal supply lines
111
-
1
to
111
-n belong to an interconnection line group consisting of lines arranged horizontally in the core region
101
. The clock signal supply lines
110
-
1
to
110
-n and the clock signal supply lines
111
-
1
to
111
-n are connected in a cross relation to each other to form a mesh-like interconnection pattern. The second signal driver circuits
104
as mentioned above are uniformly located and connected to the mesh-like lines formed by the clock signal supply lines
110
-
1
to
110
-n,
111
-
1
to
111
-n. The clock signals supplied to the mesh-like interconnection lines are supplied to megacells
301
a
,
301
b
and flip-flop circuit cell groups
302
, each requiring the clock signals in the core region
101
.
Clock signals are supplied to the semiconductor integrated circuit device
100
, and the clock signals output by the first signal driver circuit
103
are uniformly supplied to the second signal driver circuits
104
with the third signal driver circuits
105
a
,
105
b
and the fourth signal driver circuits
106
a
-
106
d
symmetrically arranged to each other between the first signal driver circuit
103
and the second signal driver circuits
104
, whereby the clock signals are uniformly supplied to the mesh-like clock signal supply lines
110
-
1
to
110
-n and
111
-
1
to
111
-n. This allows unevenness of the clock signals reaching the megacells
301
a
,
301
b
and the flip-flop circuit cell groups
302
in the core region
101
to be reduced, resulting in a variety of signal processes using clock signals with reduced clock skews in the internal integrated circuit groups in the core region
101
.
In modern technology of semiconductor integrated circuit devices, however, there is always an increasing need for high-speed operations, and accordingly, semiconductor integrated circuit devices having clock driver circuits with considerably reduced clock skews are required. There are several problems with the above mentioned conventional semiconductor integrated circuit device, which may cause an inability to meet there requirements.
For example, as shown in
FIG. 8
, when the megacells
301
a
,
301
b
are unevenly arranged in the core region
101
, or the flip-flop circuit cell groups
302
are densely or sparsely arranged therein, the signal supply load on each of the second signal driver circuits
104
widely vary for the megacells
301
a
,
301
b
and the flip-flop circuit cell groups
302
. For this reason, the clock skews maybe increased for high-speed clock signals, even when the mesh-like interconnected clock signal supply lines
110
-
1
to
110
-n and
111
-
1
to
111
-n are used as shown in FIG.
8
.
In this case, it can be a solution to reduce the clock skews that the megacells
301
a
,
301
b
and the flip-flop circuit cell groups
302
each requiring clock signals are re-arranged to provide a uniform signal supply load in the core region
101
. However, this re-arrangement requires considerable time and labor for the layout and raises a problem of the delayed development of semiconductor integrated circuit devices.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a semiconductor integrated circuit device and a layout method of a clock driver considerably reducing clock skews without requiring the re-arrangement of cells in the core region
101
, other than the clock driver circuit.
According to the semiconductor integrated circuit device of one aspect of the present invention an adjustment is carried out such that the plurality of clock driver circuits are arranged by increasing or decreasing the number of rows of transistors in each of the clock driver circuits based on the density of the cells using the clock signals in the neighboring regions of each of the dispersedly arranged clock driver circuits, by using MOS transistors of MOS transistor groups arranged in an array in the peripheral region and bounded region portions in a plurality of divided regions into which the core region is divided.
According to the semiconductor integrated circuit device of another aspect of the present invention, an adjustment is carried out such that the plurality of clock driver circuits are arranged by increasing or decreasing the number of clock driver circuits in the neighboring regions based on the density of the cells using the clock signals in the neighboring regions of each of the dispersedly arranged clock driver circuits, by using MOS transistors of MOS transistor groups arranged in an array in the peripheral region and bounded region portions in a plurality of divided regions into which the core region is divided.
According to the semiconductor integrated circuit device of still another aspect of the present invention, an adjustment is carried out such that the plurality of clock driver circuits are arranged by shifting each of the clock driver circuits based on the density of the cells using the clock signals in the neighboring regions of each of the dispersedly arranged clock driver circuits, by using MOS transistors of MOS transistor groups arranged in an array in the peripheral region and bounded region portions in a plurality of divided regions into which the core region is divided.
According to the semicondu

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