Method of fabricating flash memory device

Details Method of fabricating flash memory device Method of fabricating flash memory device

2008-06-03

2008-06-03

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S586000

Reexamination Certificate

active

07381617

ABSTRACT:
A method of fabricating flash memory devices includes the steps of forming a stop nitride film and an oxide film on a semiconductor substrate having a predetermined structure formed therein, forming trenches in the oxide film and the stop nitride film, forming barrier oxide films on lateral faces of the trenches by an atomic layer deposition method, and forming bit lines within the trenches.

REFERENCES:
patent: 2002/0060334 (2002-05-01), Shukuri et al.
patent: 2006/0194385 (2006-08-01), Hong
patent: 2007/0238286 (2007-10-01), Kwon
patent: 2006-245538 (2006-09-01), None
patent: 1020010077260 (2001-08-01), None

Affiliated with

Also associated with

Rating

Method of fabricating flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2815239