Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-01
2008-01-01
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257S739000, C257S778000, C257SE23021, C257SE23023
Reexamination Certificate
active
07314817
ABSTRACT:
A microelectronic assembly including a plurality of conductive columns extending from a bond pad of a microelectronic device and a conductive adhesive on a land pad of a carrier substrate electrically attached to the conductive columns.
REFERENCES:
patent: 5686762 (1997-11-01), Langley
patent: 5739587 (1998-04-01), Sato
patent: 5923088 (1999-07-01), Shiue et al.
patent: 6163074 (2000-12-01), Lee et al.
patent: 6313540 (2001-11-01), Kida et al.
patent: 6384343 (2002-05-01), Furusawa
patent: 6593643 (2003-07-01), Seki et al.
Wolf et al., “Silicon Processing for the VLSI Era”, 2000, pp. 851-852, vol. 1, Lattice-Press, USA.
Chandran Biju
Dias Rajen
Guglielmi David L.
Intel Corporation
Thai Luan
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