Lateral undercut of metal gate in SOI device

Details Lateral undercut of metal gate in SOI device Lateral undercut of metal gate in SOI device

2008-07-22

2008-07-22

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S340000, C257S347000, C257S368000, C257S388000

Reexamination Certificate

active

07402875

ABSTRACT:
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer, source/drain extensions a distance beneath the metal gate, and lateral undercuts in the sides of the metal gate.

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