Shallow trench isolation formation

Details Shallow trench isolation formation Shallow trench isolation formation

2008-03-25

2008-03-25

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S401000, C257S506000, C257S622000

Reexamination Certificate

active

07348634

ABSTRACT:
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.

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