Metal oxide field effect transistor with a sharp halo and a...

Details Metal oxide field effect transistor with a sharp halo and a... Metal oxide field effect transistor with a sharp halo and a...

2008-06-10

2008-06-10

Kunemund, Robert (Department: 1791)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21435

Reexamination Certificate

active

07384835

ABSTRACT:
Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

REFERENCES:
patent: 5182619 (1993-01-01), Pfiester
patent: 6248637 (2001-06-01), Yu
patent: 6555437 (2003-04-01), Yu
patent: 6656824 (2003-12-01), Hanafi et al.
patent: 6730552 (2004-05-01), Abadeer et al.
patent: 6774000 (2004-08-01), Natzle et al.
patent: 6858532 (2005-02-01), Natzle et al.
patent: 6888221 (2005-05-01), Joseph et al.
patent: 6949796 (2005-09-01), Ellis-Monaghan et al.
patent: 6958286 (2005-10-01), Chen et al.
patent: 2004/0191998 (2004-09-01), Natzle et al.
patent: 2004/0248368 (2004-12-01), Natzle et al.
patent: 2005/0035408 (2005-02-01), Wang et al.
patent: 2005/0093084 (2005-05-01), Wang et al.
patent: 2005/0218114 (2005-10-01), Yue et al.

Affiliated with

Also associated with

Rating

Metal oxide field effect transistor with a sharp halo and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide field effect transistor with a sharp halo and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide field effect transistor with a sharp halo and a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2806370