Method of forming a field effect transistor comprising a...

Details Method of forming a field effect transistor comprising a... Method of forming a field effect transistor comprising a...

2008-06-03

2008-06-03

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S301000, C438S592000, C257SE27108

Reexamination Certificate

active

07381602

ABSTRACT:
A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined tensile intrinsic stress of about 900 MPa or more. Due to this high intrinsic stress, the stressed layer exerts considerable elastic forces to the channel region of the transistor element. Thus, tensile stress is created in the channel region. The tensile stress leads to an increase of the electron mobility in the channel region.

REFERENCES:
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 2004/0029323 (2004-02-01), Shimizu et al.
patent: 2005/0247926 (2005-11-01), Sun et al.
patent: 2006/0009041 (2006-01-01), Iyer et al.

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