Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2008-05-20
2008-05-20
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S458000, C257SE21568
Reexamination Certificate
active
07375008
ABSTRACT:
The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
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Akatsu Takeshi
Aulnette Cécile
Faure Bruce
Ghyselen Bruno
Osternaud Bénédite
Geyer Scott B.
Nikmanesh Seahvosh J
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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