SONOS embedded memory with CVD dielectric

Details SONOS embedded memory with CVD dielectric SONOS embedded memory with CVD dielectric

2008-06-24

2008-06-24

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000

Reexamination Certificate

active

07390718

ABSTRACT:
An embedded semiconductor memory is fabricated by: forming diffusion bit line regions in a semiconductor substrate; then thermally oxidizing the upper surface of the substrate, thereby forming a bottom oxide layer over the substrate and simultaneously forming bit line oxide regions over each of the diffusion bit line regions; and then forming an intermediate dielectric layer (e.g., silicon nitride), over the bottom oxide layer and the bit line oxide regions. CMOS well implants are then performed in a CMOS section of the device through the silicon nitride layer and bottom oxide layer. The silicon nitride layer and bottom oxide layer are then removed in the CMOS section, and a top dielectric layer, such as a high-temperature oxide or a high-k dielectric, is deposited. The top dielectric layer completes a memory stack of the memory device, and forms a gate dielectric layer of a high voltage transistor in the CMOS section.

REFERENCES:
patent: 5963808 (1999-10-01), Lu et al.
patent: 6117730 (2000-09-01), Komori et al.
patent: 6265268 (2001-07-01), Halliyal et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 7214578 (2007-05-01), Takahashi
patent: 7309629 (2007-12-01), Takahashi
patent: 2003/0157758 (2003-08-01), Ohtani et al.
patent: 2005/0158954 (2005-07-01), Takahashi
patent: 2005/0186741 (2005-08-01), Roizin et al.
patent: 2007/0020848 (2007-01-01), Takahashi
Candelier et al. “High Temperature Oxide (HTO) for Non Volatile Memories Applications”Microelectronic Engineering36 (1997) 87-90.

Affiliated with

Also associated with

Rating

SONOS embedded memory with CVD dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SONOS embedded memory with CVD dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SONOS embedded memory with CVD dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2804120