Flip chip interconnection pad layout

Details Flip chip interconnection pad layout Flip chip interconnection pad layout

2008-05-13

2008-05-13

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

C257S778000, C257S691000, C438S111000, C438S112000, C361S735000, C361S760000

Reexamination Certificate

active

07372170

ABSTRACT:
A flip chip interconnect pad layout has the die signal pads are arranged on the die surface near the perimeter of the die, and the die power and ground pads arranged on the die surface inboard from the signal pads; and has the signal pads on the corresponding package substrate arranged in a manner complementary to the die pad layout and the signal lines routed from the signal pads beneath the die edge away from the die footprint, and has the power and ground lines routed to vias beneath the die footprint. Also, a flip chip semiconductor package in which the flip chip interconnect pad layouts have the die signal pads situated in the marginal part of the die and the die power and ground pads arranged on the die surface inboard from the signal pads, and the corresponding package substrates have signal pads arranged in a manner complementary to the die pad layout and signal lines routed from the signal pads beneath the die edge away from the die footprint.

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