Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-07-01
2008-07-01
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S222000, C365S189090
Reexamination Certificate
active
07394709
ABSTRACT:
A memory device is provided which has: a memory cell to store data; a word line to select the memory cell; a bit line connectable to the selected memory cell; a precharge power supply to supply a precharge voltage to the bit line; a precharge circuit to connect or disconnect the precharge power supply to or from the bit line; and a current limiting element to control the magnitude of a current flowing between the precharge power supply and the bit line at least by two steps according to an operation status.
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Fujioka Shin-ya
Mori Kaoru
Arent & Fox LLP
Fujitsu Limited
Le Thong Q
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