Method for producing a vertical field effect transistor

Details Method for producing a vertical field effect transistor Method for producing a vertical field effect transistor

2008-07-29

2008-07-29

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S200000, C438S253000, C438S283000, C257SE21410, C257SE21442

Reexamination Certificate

active

07405127

ABSTRACT:
A method for producing a field effect transistor, in which a plurality of layers are in each case deposited, planarized and etched back, in particular a gate electrode layer, is disclosed. This method allows the manufacturing of transistors having outstanding electrical properties and having outstanding reproducibility.

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