Semiconductor device and method of making semiconductor devices

Details Semiconductor device and method of making semiconductor devices Semiconductor device and method of making semiconductor devices

2008-05-06

2008-05-06

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000

Reexamination Certificate

active

07368340

ABSTRACT:
A semiconductor device includes a semiconductor substrate in which an insulating layer is formed in a part of an region, a semiconductor layer is formed by epitaxial growth and located on the insulating layer, a first gate electrode is formed at the sidewall of the semiconductor layer, first source and drain regions are formed in the semiconductor layer and located at the side of the first gate electrode, a second electrode is formed on the semiconductor substrate, and second source and drain regions are formed in the semiconductor substrate and located at the side of the second gate electrode.

REFERENCES:
patent: 7001822 (2006-02-01), Iwamatsu et al.
patent: 7180134 (2007-02-01), Yang et al.
patent: 10-261799 (1998-09-01), None
patent: 2000-124092 (2000-04-01), None
patent: 2002-299591 (2002-10-01), None
T. Sakai, et al., “Seperation By Bonding Si Islands (SBSI) for LSI Applications”, Second International SiGE Technology and Device Meeting, Meeting Abstract, pp. 230-231, May (2004).

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