Methods for forming uniform lithographic features

Details Methods for forming uniform lithographic features Methods for forming uniform lithographic features

2008-04-01

2008-04-01

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S422000, C438S614000, C438S675000, C257SE21576

Reexamination Certificate

active

07351648

ABSTRACT:
Methods for fabricating a semiconductor device include forming a first layer on an underlying layer, forming a hardmask on the first layer, and patterning holes through the hardmask and first layer. An overhang is formed extending over sides of the holes. A conformal layer is deposited over the overhang and in the holes until the conformal layer closes off the holes to form a void/seam in each hole. The void/seam in each hole is exposed by etching back a top surface. The void/seam in each hole is extended to the underlying layer.

REFERENCES:
patent: 6838355 (2005-01-01), Stamper et al.
patent: 6972443 (2005-12-01), Khater
patent: 7012007 (2006-03-01), Goo et al.
patent: 7075145 (2006-07-01), Williams et al.

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