Finfet/trigate stress-memorization method

Details Finfet/trigate stress-memorization method Finfet/trigate stress-memorization method

2008-03-11

2008-03-11

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S514000, C438S525000, C257SE21400

Reexamination Certificate

active

07341902

ABSTRACT:
Disclosed are embodiments a technique for inducing strain into the polysilicon gate of a non-planar FET (e.g., a finFET or trigate FET) in order to impart a similar strain on the FET channel region, while simultaneously protecting the source/drain regions of the semiconductor fin. Specifically, a protective cap layer is formed above the source/drain regions of the fin in order to protect those regions during a subsequent amporphization ion implantation process. The fin is further protected, during this implantation process, because the ion beam is directed towards the gate in a plane that is parallel to the fin and tilted from the vertical axis. Thus, amorphization of the fin and damage to the fin are limited. Following the implantation process and the formation of a straining layer, a recrystallization anneal is performed so that the strain of the straining layer is ‘memorized’ in the polysilicon gate.

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