Plasma etching using improved electrode

Details Plasma etching using improved electrode Plasma etching using improved electrode

1979-10-17

1981-10-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 204192E, 204298, 250531, H01L 21306, C23F 100

Patent

active

042971624

ABSTRACT:
Radio frequency plasma etching of conductive coatings on semiconductor slices is improved by the use of a curved electrode which is closer to the slice at the center than at the periphery. Preferably, the electrode is in a symmetrical chamber which contains only one slice, and reactant gases are admitted through apertures in the electrode. An r.f. power source is connected between the electrode and a holder for the slice.

REFERENCES:
patent: 4126530 (1978-11-01), Thornton
patent: 4172021 (1979-10-01), Gladish
patent: 4209357 (1980-06-01), Gorin et al.

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