Semiconductor device having stacked decoupling capacitors

Details Semiconductor device having stacked decoupling capacitors Semiconductor device having stacked decoupling capacitors

2011-08-16

2011-08-16

Gebremariam, Samuel A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S307000, C257S532000

Reexamination Certificate

active

07999297

ABSTRACT:
A semiconductor device having transistors formed on different layers of a stack structure includes a stacked capacitor cluster, wherein a stacked capacitor of the stacked capacitor cluster includes an insulation layer of a transistor of the semiconductor device, and at least a first conduction layer and a second conduction layer disposed above and below the insulation layer, wherein the stacked capacitor is a decoupling capacitor of the stacked capacitor cluster connected in parallel between a first line and a second line.

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European Search Report - EP-07-01-3186; Date of Search Oct. 31, 2007.

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