Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2008-01-01

2008-01-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C257S350000, C257S401000

Reexamination Certificate

active

07314787

ABSTRACT:
A manufacturing method of a semiconductor device disclosed herein comprises: forming a convex first protrusion; forming a first film, of which a surface is higher than the first protrusion; forming a mask portion on the first film; and etching the first film with the mask portion as a mask.

REFERENCES:
patent: 5045903 (1991-09-01), Meyer et al.
patent: 5554888 (1996-09-01), Kato
patent: 5804848 (1998-09-01), Mukai
patent: 6284613 (2001-09-01), Subrahmanyam et al.
patent: 6624473 (2003-09-01), Takehashi et al.
Y. Choi et al., “A Spacer Patterning Technology for Nanoscale CMOS”, IEEE Transactions on Electron Devices, vol. 49, No. 3, pp. 436-441, (Mar. 2002).

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