Method of forming carbon-containing silicon nitride layer

Details Method of forming carbon-containing silicon nitride layer Method of forming carbon-containing silicon nitride layer

2008-05-13

2008-05-13

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S791000, C257SE21435

Reexamination Certificate

active

07371649

ABSTRACT:
A method for forming a carbon-containing silicon nitride layer with superior uniformity by low pressure chemical vapor deposition (LPCVD) using disilane, ammonia and at least one carbon-source precursor as reactant gases is provided.

REFERENCES:
patent: 6746906 (2004-06-01), Rabkin et al.
patent: 7253123 (2007-08-01), Arghavani et al.
patent: 2005/0109276 (2005-05-01), Iyer et al.
patent: 2005/0158983 (2005-07-01), Hoshi et al.
patent: 2005/0287747 (2005-12-01), Chakravarti et al.
patent: 2006/0189065 (2006-08-01), Wang et al.

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