Non-volatile memory device and methods of forming the same

Details Non-volatile memory device and methods of forming the same Non-volatile memory device and methods of forming the same

2008-07-08

2008-07-08

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29129, C257SE29300, C257SE21179, C257SE21680, C438S201000, C438S257000

Reexamination Certificate

active

07397079

ABSTRACT:
A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.

REFERENCES:
patent: 5455793 (1995-10-01), Amin et al.
patent: 7276759 (2007-10-01), Yu et al.
patent: 09-064208 (1997-03-01), None
patent: 10-0390889 (2003-07-01), None
patent: 10-2004-0049874 (2004-06-01), None

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