Methods of forming non-volatile memory cells, and methods of...

Details Methods of forming non-volatile memory cells, and methods of... Methods of forming non-volatile memory cells, and methods of...

2011-03-29

2011-03-29

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S591000, C438S781000, C438S786000, C438S790000, C438S794000, C257SE21679

Reexamination Certificate

active

07915126

ABSTRACT:
Some embodiments include methods of utilizing polysilazane in forming non-volatile memory cells. The memory cells may be multi-level cells (MLCs). The polysilazane may be converted to silicon nitride, silicon dioxide, or silicon oxynitride with thermal processing and exposure to an ambient that contains one or both of oxygen and nitrogen. The methods may include using the polysilazane in forming a charge trapping layer of a non-volatile memory cell. The methods may alternatively, or additionally include using the polysilazane in forming intergate dielectric material of a non-volatile memory cell. Some embodiments include methods of forming memory cells of a NAND memory array.

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