Semiconductor devices including line patterns separated by...

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

Reexamination Certificate

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Details

C257S208000, C257S207000, C257S620000, C257SE29120

Reexamination Certificate

active

07898007

ABSTRACT:
Semiconductor devices are provided. A semiconductor device can include a substrate and a plurality of dummy line patterns on the substrate that extend in a first direction parallel with one another. Each of the dummy line patterns can include a plurality of sub-line patterns aligned along the first direction and which are separated from each other by at least one cutting region therebetween. The dummy line patterns can include first and second dummy line patterns which are adjacent to each other in a second direction that is perpendicular to the first direction. At least one of the cutting regions between a pair of sub-line patterns of the first dummy line pattern is aligned with and bounded by one of the sub-line patterns of the second dummy line pattern in the second direction.

REFERENCES:
patent: 5032890 (1991-07-01), Ushiku et al.
patent: 7023094 (2006-04-01), Suga
patent: 7226855 (2007-06-01), Suga
patent: 7724597 (2010-05-01), Lee
patent: 2003/0107055 (2003-06-01), Watanabe et al.
patent: 2004/0262640 (2004-12-01), Suga
patent: 2006/0118966 (2006-06-01), Suga
patent: 2006/0194429 (2006-08-01), Hashimoto et al.
patent: 2005-19604 (2005-01-01), None
patent: 2003-0001883 (2003-01-01), None
patent: 10-2006-0002180 (2006-01-01), None
patent: 10-2006-0074876 (2006-07-01), None

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