Method of manufacturing flash memory device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21680

Reexamination Certificate

active

07374997

ABSTRACT:
A method of manufacturing flash memory devices includes depositing a nitride film over a semiconductor substrate and forming an oxide film below the nitride film using an oxidization process involving an anneal process. A tunnel oxide film or an ONO2 oxide film having a thin thickness and a good film quality is formed and the operating performance of memory cells is improved.

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