Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-16
2011-08-16
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S639000, C438S672000, C438S674000, C438S675000, C257S774000, C257SE27098, C257SE21661, C257SE21585, C257SE21576, C257SE21577, C257SE21586, C257SE21433, C257SE21435, C257SE21507
Reexamination Certificate
active
07998851
ABSTRACT:
A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.
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Jung In-Soo
Lee Deok-hyung
Lee Jong-wook
Lee Sun-ghil
Lee Young-Eun
Lopez Fei Fei Yeung
Muir Patent Consulting, PLLC
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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