Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-23
2011-08-23
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21046, C257SE21591, C438S597000, C977S847000
Reexamination Certificate
active
08003453
ABSTRACT:
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.
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Avouris Phaedon
Carruthers Roy A.
Chen Jia
Detavernier Christopher G. M. M.
Lavoie Christian
Alexanian Vazken
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Such Matthew W
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