Method of fabricating semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S270000, C438S585000, C257SE21645

Reexamination Certificate

active

07906398

ABSTRACT:
In a method of fabricating a semiconductor device having vertical channels and a method of patterning a gate electrode of such semiconductor device, an initial conductive layer is removed by multiple etching processes.

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Office Action dated Jan. 21, 2010, for Korean application No. 10-2008-0031477.
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Chinese Office Action for application No. 200910132611.0, dated Oct. 11, 2010.

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