Method of forming a structure over a semiconductor substrate

Details Method of forming a structure over a semiconductor substrate Method of forming a structure over a semiconductor substrate

2008-07-15

2008-07-15

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S786000

Reexamination Certificate

active

07399714

ABSTRACT:
The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrogen within the silicon dioxide is at least 10 Å above the substrate. After the nitrogen is formed within the silicon dioxide layer, conductively doped silicon is formed on the silicon dioxide layer.

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